摘要
A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.
A 32 Gb/s monolithically integrated electroabsorption modulated laser is fabricated by selective area growth technology. The threshold current of the device is below 13mA. The output power exceeds 10mW at 0V bias when the injection current of the distributed feedback laser is 100mA at 25℃. The side mode suppression ratio is over 50 dB. A 32Gb/s eye diagram is measured with a 3.SVpp nonreturn-to-zero pseudorandom modulation signal at -2.3 V bias. A clearly opening eyediagram with a dynamic extinction ratio of 8.01 dB is obtained.
基金
Supported by the National High-Technology Research and Development Program of China under Grant Nos 2011AA010303and 2012AA012203
the National Basic Research Program of China under Grant No 2011CB301702
the National Natural Science Foundation of China under Grant Nos 61321063 and 6132010601
