摘要
We demonstrate nearly i e V GaN0.03As0.97 /In0.09 Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a pho- toluminescence (PL) at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As super- lattice solar cells show a reasonably-high short-circuit current density (Jsc) of over lOmA/cm2. Eurthermore, a concentration behavior is measured, which shows a linear relationship between Jsc and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes.
We demonstrate nearly i e V GaN0.03As0.97 /In0.09 Ga0.91As strain-compensated short-period superlattice solar cells by all solid-state molecular beam epitaxy. The optimal period thickness for the superlattice growth is achieved to realize high structural quality. Meanwhile, the annealing conditions are optimized to realize a pho- toluminescence (PL) at a low temperature. However, no PL signal is detected at room temperature, which could be reflected by a lower open-circuit voltage of the fabricated devices. The GaN0.03As0.97/In0.09Ga0.91As super- lattice solar cells show a reasonably-high short-circuit current density (Jsc) of over lOmA/cm2. Eurthermore, a concentration behavior is measured, which shows a linear relationship between Jsc and concentration ratios. The extrapolated ideality factor and saturated current density by the concentration action are in good agreement with that extracted by the dark case of the p-i-n diodes.
基金
Supported by the National Natural Science Foundation of China under Grant No 61274134
the University of Science and Technology Beijing Talents Start-up Program under Grant No 06105033
the International Cooperation Projects of Suzhou City under Grant No SH201215