摘要
The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
The effects of different masks and patterns on the top stripping of GaAs microwire arrays fabricated by inductively coupled plasma etching for 20min and 40min are investigated. The results show that the mask layer is the main affect of the top stripping of the GaAs microwires in 40min. Increasing the mask layers and reducing the photoresist layers can prevent top stripping and result in a suitable GaAs microwire array.
基金
Supported by the National Natural Science Foundation of China under Grant Nos 61261009 and 61067001
the Key Program of Science and Technology Research of the Ministry of Education of China under Grant No 212090
the Natural Science Foundation of Jiangxi Province under Grant No 20133ACB20005
the Foundation of Training Academic and Technical Leaders for Main Majors of Jiangxi Province under Grant No 20142BCB22006
