摘要
利用磁控溅射方法,溅射室背底真空优于2.0×10^-5Pa,采用不同的功率在Si（100）（电阻率为7~13Ωcm）衬底上沉积一层铁薄膜（150-330nm）,然后在900℃,15h背底真空条件下（4×10^-4Pa）退火,形成了β-FeSi2。采用扫描电子显微镜（SEM）对其表面形貌结构进行表征,并采用X射线衍射仪（XRD）对其进行了晶体的结构分析,当溅射功率为70~100W时,主要衍射峰来自β-FeSi2,但同时在2θ=45°处有较大的FeSi峰,在2θ=38°附近出现较大的Fe5Si3峰。研究结果表明,制备β-FeSi2薄膜的最佳溅射功率为110W,在900℃退火15h。
The magnetron sputtering method with the sputtering chamber backing vacuum better than 2. 0 × 10^ -5 Pa, is used. A layer of Fe film（ 150 nm- 330 rim） is deposited on the substrate of the Si（100） （ electrical resistivity of 7 × 13 Ωcm） at different powers. Then at 900 ℃, it is annealed for 15 hours with the backing being vacuum（4 × 10^-4 Pa） to form a β-FeSi2. The scanning electron microscopy（SEM） is used to characterize its surface morphology structure. The X-ray diffraction （XRD） is used to analyze its crystal structure. When the sputtering power is 70 - 100 W, the main diffraction peak is derived from β-FeSi2, but at 2θ =45°a relatively large FeSi large peak appears, and a larger Fe5Si3 peak appears in the vicinity of 2θ = 38 °. The results show that the best preparation for the β-FeSi2 film is annealing at 900 ℃ for 15 hours with a sputtering power of 110 W.
出处
《电子科技》
2015年第5期111-113,117,共4页
Electronic Science and Technology
基金
贵州省优秀教育科技人才省长基金资助项目(黔省专合字[2011]40号)
