残留应变对晶格失配太阳电池设计的影响

Effect of residual strain on design of lattice-mismatched solar cell

由于晶格失配太阳电池中存在残留应变,1.0eV InGaAs子电池和0.7eV InGaAs子电池的带隙不再固定地对应于单一In组份,而是与In组份和残留应变都有关系。从实验和理论上研究了残留应变对晶格失配太阳电池带隙的影响,计算了不同应变和组份的InGaAs电池的等带隙分布线,并讨论了残留应变对晶格失配太阳电池设计的影响。

Because of residual strain in lattice-mismatched solar cell, the bandgap of 1.0 eV InGaAs and 0.7 eV InGaAs solar cells does not fixedly correspond to single In composition, but related with the In composition and residual strain. The effect of residual strain on the bandgap of lattice-mismatched solar cell was studied; the iso-bandgap curve of InGaAs cells with different In composition and residual strain was calculated; the influence of residual strain on the design of lattice-mismatched solar cell was discussed.