TiO_2忆阻器的磁控模型分析及电路实现

Flux-controlled Model Analysis and Circuit Implementation of TiO_2 Memristor

为了建立忆阻器的电导模型,基于TiO2忆阻器的荷控数学模型分析了其无源和有源的磁控数学模型,并设计了实现其伏安特性的双口电路模型,对电路模型进行了理论分析。利用Multisim对磁控忆阻器的电路模型进行了仿真验证,不同参数条件下的仿真结果与磁控忆阻器模型的特性完全一致。

This paper aims at establishing the conductivity model of the memristor .On the basis of charge-controlled TiO2 memristor, build the passive and positive flux-controlled mathematical model , through which two-port-circuit model is designed and verified by a theoretical analysis .Present a simulation and verification for the flux-controlled circuit model using Multisim and the results turn out to be exactly the same as characteristics of the flux-controlled memristor under different conditions .