IGBT闭环变电阻开关策略研究

The Research on Closed-Loop Variable Resistance Switching Strategy of IGBT

提出一种新的IGBT闭环变电阻驱动策略来增强开环变电阻策略的实用性,并改善开通/关断特性。该策略通过检测IGBT集电极电流变化率(di/dt)与电压变化率(dv/dt),对正常开通/关断过程中门极电阻的切换进行闭环控制,在保证IGBT安全工作、防止产生较大电磁干扰的前提下,加快IGBT开关速度并减小开关损耗。最后通过仿真验证了该策略的可行性。

A novel closed-loop variable gate resistance driving strategy is presented in this paper to enhance the practicability of traditional variable resistance strategy and to improve the switching performance of IGBT. The closed-loop control strategy is adopted to change the gate resistance during normal switching transient by sensing the collector current rate（di/dt） and voltage rate（dv/dt）. The switching time and loss could be reduced by this strategy on the premise that IGBT works in safety and causes small EMI. In the end, the feasibility of the strategy is verified by simulation.