过冷度对硅晶体取向特征及晶粒尺寸的影响

EFFECT OF DEGREE OF SUPER COOLING ON SILICON CRYSTAL ORIENTATION AND GRAIN SIZE

针对不同过冷度对应的晶体生长方向和形态的不同,采用自行研制的多晶硅铸锭炉通过控制底部热门的换热量,获得不同固液界面过冷度条件下的硅晶体,并进行对比分析。结果表明:在过冷度较大条件下易获得晶粒尺寸大,定向凝固效果好,生长方向垂直于生长界面的硅晶体。

According to different degree of cold corresponding crystal growth orientation and grain size, the polysilicon ingot furnace developed by the hot heat exchanger at the bottom to adjust mechanical control, obtain different silicon crystal with different cold conditions. Through comparison and analysis, results shown that, high quality silicon crystal is easy to obtain with large grain size, and directional solidification effect is good, growth direction is perpendicular to the growth interface at large undercooling condition.