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针对N型IBC太阳电池中背结模型的建立及优化 被引量:4

THE ESTABLISHMENT AND OPTIMIZATION OF REAR EMITTER MODEL FOR N-TYPE IBC SOLAR CELLS
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摘要 在N型衬底上制作2 cm×2 cm的双面太阳电池片,并对电池的正反面进行I-V、量子效率、掺杂形貌测试。通过将结果导入到PC1D中并拟合内量子效率,建立N型背结太阳电池的模型。通过调整背结太阳电池模型中串并联电阻、衬底寿命、表面复合速率、前表面场等参数,发现串联电阻与前表面场掺杂浓度是N型背结太阳太阳电池设计的关键。将这两个参数进行优化,电池效率的增幅分别为19.7%与33.9%。最终将N型背结太阳电池效率优化到20.6%。 A bifacial solar cell was fabricated on N type silicon substrate. Double surfaces were tested to achieve their current voltage curve, reflectance, doping curve for boron and phosphorus, internal quantum efficiency (IQE) and external quantum efficiency (EQE). Then, we put the some test results in PC1D to model this bifacial solar cell and compare the IQE and EQE of simulation and experimental results to ensure the accuracy of the model. By optimizing the model, serial resistance and front surface field (FSF) concentration were prove to be the key parameters for N type solar cell with emitter in rare surface. The amplification of efficiency is 19.7% and 33.9% for optimization serial resistance and FSF concentration in our model, respectively. The efficiency was finally increased to 20.6% in optimization model for N type solar cell with emitter in rare surface.
出处 《太阳能学报》 EI CAS CSCD 北大核心 2015年第5期1274-1277,共4页 Acta Energiae Solaris Sinica
基金 中国科技部项目(2012AA050304) 国家自然基金(11104319 11274346 51202285 61234005 51172268) 中国科学院太阳能行动计划(Y1YT064001 Y1YF034001 Y2YF014001)
关键词 N型双面太阳电池 PC1D 串联电阻 前表面场 N type bifacial solar cell PC1D series resistance front surface field
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参考文献4

  • 1Cousins P, Smith D, Luan H C, et al. Generation 3: Improved performance at lower cost[A]. 35th IEEE Photovohaic Specialists Conference [C] , Honolulu, Hawaii, 2010.
  • 2Kerschaver E V, Beaucame G. Back-contact solar cells : A review [J]. Progress in Photovohaics: Research and Applications, 2006, 14: 107-123.
  • 3ZHANG Wei,CHEN Chen,JIA Rui,Janssen G.J.M.,ZHANG Dai-Sheng,XING Zhao,Bronsveld P.C.P.,Weeber A.W.,JIN Zhi,LIU Xin-Yu.Optimization of Metal Coverage on the Emitter in n-Type Interdigitated Back Contact Solar Cells Using a PC2D Simulation[J].Chinese Physics Letters,2013,30(7):254-257. 被引量:9
  • 4Basore P A, Clugston D A. PC1D Version 5.9[M]. Sydney: University of New South Wales, 2003.

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