IGBT功率模块封装中先进互连技术研究进展

State-of-the-art Progress of Advanced Interconnection Technology for IGBT Power Module Packaging

随着新一代IGBT芯片结温及功率密度的提高,对功率电子模块及其封装技术的要求也越来越高。文章主要介绍了功率电子模块先进封装互连技术的最新发展趋势,重点比较了芯片表面互连、贴片焊接互连、导电端子引出互连等3种先进互连技术及其封装工艺的优缺点,讨论了功率电子模块封装及互连技术所面临的问题与挑战。

With the development of next-generation IGBT chips towards higher junction temperature and power density, much greater is the demand to power electronic module and its packaging technology. Hence, state-of-the-art progress of advanced interconnection technology in power IGBT module packaging was reviewed. Three kinds of interconnection technologies were highlighted, such as die attach, wire- bonding on the chips and power terminal lead-out. In addition, the subsidiary processes of these three interconnection technologies were also compared in details according to their features. As a result, the existing problems and challenges of power electronic module packaging and interconnection technologies in the future were discussed with respect to their applicability for power electronic packaging.