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三电平NPC拓扑结构中功率IGBT器件的应用和分析 被引量:1

Application and Analysis of Power IGBT Device in Three-level NPC Topology
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摘要 讨论了三电平NPC拓扑结构的基本工作原理和相应的换流路径;考虑到IGBT模块对直流电压稳定性的要求,给出在给定故障率条件下允许长期运行的最大直流母线电压;分析了器件芯片技术及封装的特点,给出了在三电平应用中的IGBT解决方案;以4.5k V IGBT为例,研究了三电平拓扑布局应用中杂散电感及结温差异所引起的开关特性问题,并提出一些在三电平设计中关于IGBT模块均流和布局应用方面的建议。 It discussed the basic working principles of three-level topology as well as its corresponding commutation loops, defined the maximum DC-link voltage in continuous operation with given FIT curves by considering reliability requirements, and brought up a solution of three-level topology with IGBT modules by analyzing its chip technologies and housing features. Taking 4.5kV IGBT as an example, it studied the different switching characteristics caused by kinds of stray inductances and junction temperature in three-level topology, and proposed some suggestions about current sharing and symmetric layout of inverter desion.
作者 赵振波 王恒
出处 《大功率变流技术》 2015年第2期24-29,34,共7页 HIGH POWER CONVERTER TECHNOLOGY
关键词 三电平拓扑 IGBT 换流回路 直流母线电压 杂散电感 结温 均流 对称结构 three-level topology IGBT commutation circuit sharing symmetrical layout DC-link voltage stray inductance junction temperature current
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参考文献10

  • 1Schuetze T. A 4.5 kV IGBT/Diode chip set for HVDC transmission application [ Z/OL ] . 2014-10-25 [ 2014-12-30 ] . http: //www. powersystem.com.
  • 2Bayeer R. Power Circuit Design for Clean Switching [ C ] //The 6th International Conference on Integrated Power Electronics Systems (CIPS), Nuremberg, 2010.
  • 3Wu Jun. Development of a compact 750kVA three-phase NPC three- level universal inverter module with specially design bus [ C ] //The 25th Annual IEEE on Applied Power Electronics Conference and Exposition (APEC). Palm Springs, CA, 2010.
  • 4Infineon Technologies .An about the definition of FIT and MBTIE[ Z ]. Infineon Technologies, 1999.
  • 5Bruckner T, Bernet S. Estimation and Measurement of Junction Temperatures in a Three-Level Voltage Source Converter [ J ] . IEEE Transactions on Power Electronics, 2007, 22(1): 3-12.
  • 6Zhang Xi, Jansen U. IGBT power modules utilizing new 650V IGBT3 and emitter controlled diode chips for three-level converter [ Z/ OL ] . [ 2014-12-30 ] .http: //Infineon-PCIM_2009_650 V IGBT3_ Modules-ED-v 1.0-en.pdf?fileld=db3a30432ddc4fc8012ddc802720000e.
  • 7赵振波,梁知宏.IGBT并联设计参考[J].变频器世界,2008(12):73-77. 被引量:11
  • 8赵争鸣,白华,张海涛,袁立强,刘建政.三电平变频器中的IGBT失效机理分析[J].电力电子,2004,2(5):30-34. 被引量:2
  • 9王琛琛,李永东.多电平变换器拓扑关系及新型拓扑[J].电工技术学报,2011,26(1):92-99. 被引量:61
  • 10祝盼望,雷健升.三种三电平NPC变换器拓扑比较[J].变频器世界,2011(6):113-116. 被引量:1

二级参考文献30

  • 1Bhagwat P, Stefanovic V R. Generalized structure of a multilevel PWM inverter[J]. IEEE Transactions on Industrial Applications, 1983, 19(6): 761-766.
  • 2Nabae A, Takahashi I, Akagi H. A new neutralpoint-clamped PWM inverter[J]. IEEE Transactions on Industrial Applications, 1981, 17(5): 518-523.
  • 3Baker R H. Bridge converter circuit: United States, 4270163[P]. 1979.
  • 4Meynard T A, Foch H, Forest F, et al. Multicell converters: derived topologies[J]. IEEE Transactions on Industrial Electronics, 2002, 49(5): 978-987.
  • 5Y Xiaoming, Barbi I. Fundamentals of a new diode clamping multilevel inverter[J]. IEEE Transactions on Power Electronics, 2000, 15(4): 711-718.
  • 6L Jih Sheng, P Fangzheng. Multilevel converters-a new breed of power converters[J]. IEEE Transactions on Industrial Applications, 1996, 32(3): 509-517.
  • 7K Young Seok, S Beom Seok, H Dong Seok. A novel structure of multi-level high voltage source inverter[C]. EPE '93, 1993: 132-137.
  • 8Takafumi Maruyama, Kumano M. Method of controlling an inverter: United States, 5155675[P]. 1990.
  • 9Meynard T A, Foch H. Multi-level conversion: high voltage choppers and voltage-source inverters[C]. PESC '92, 1992: 397-403.
  • 10Meynard T A, Foch H, Thomas P, et al. Multicell converters: basic concepts and industry applications[J]. IEEE Transactions on Industrial Electronics, 2002, 49(5): 955-964.

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