具有优化沟槽HiGT结构的3.3kV/1800 A IGBT及其模块优化设计

3.3 kV/1800 A IGBT Module with Advanced Trench HiGT Structure and Its Module Design Optimization

日立公司开发了具有最高电流等级的3.3k V/1800A IGBT模块,其额定电流等级比现有同尺寸、同电压等级常规产品提高了20%。通过采用优化沟槽Hi GT结构,降低了器件功耗,同时优化了模块的电、热性能设计,降低了热阻以及寄生电感。

Hitachi developed a 3.3 kV/1 800 A IGBT module with the highest current rating, whose current rating would be increased by 20% compared with the conventional type products, which had the same size and voltage level. The advanced trench HiGT structure was used to achieve low loss, and the electrical and thermal designs were optimized in order to reduce thermal resistance and parasitic inductance.