TLM-DDM耦合模型电磁脉冲环境适用性研究

The Research of Adequacy for TLM-DDM Coupled Model in the Electromagnetic Pulse Environment

通过改进已提出的时域传输线模型(TLM)与漂移-扩散模型(DDM)相结合的TLM-DDM耦合数值计算模型中网格单元结构,用于计算带晶体管负载电缆的电磁脉冲响应问题,该模型考虑了电磁脉冲响应经过电缆的传输过程与半导体器件不同偏置状态下剧烈的电参数变化之间的耦合过程,能够反映出传输线负载不匹配产生的反射信号所引发的信号畸变、振荡等问题。利用TLM-DDM耦合模型和通用模型分别对典型算例进行数值模拟,计算结果表明:TLM-DDM耦合模型中脉冲电压信号与反射信号叠加引发加载在双极晶体管的偏置电压翻倍导致C-B结击穿和传输线上信号失真,与理论分析相符合,比未考虑传输线部分的通用模型所得结果更加贴近于物理实际。

This paper introduces the transmission line model （TLM） which is used to calculate the cable re- sponse of electromagnetic pulse （EMP） and the drift diffusion model （DDM） which is used to calculate the pa- rameter of semiconductor devices. A coupled model which contains TLM and DDM is developed for calculating responses of cables with semiconductor load under EMP. Comparing with the current model, the coupled model can show the relation of cables＇ responses to EMP and semiconductor devices＇ state. The use of the mixed meth- od is discussed and an example is given to show the applicability. The results show that the coupled model＇s difference with the truth is much smaller than the current model＇s.