砷锗镉晶体的定向加工

Directional Processing of CdGeAs_2 Crystal

介绍了一种砷锗镉(CGA)晶体定向加工的新方法,即根据CGA晶体自身解理面,结合晶体标准极图和X射线衍射图谱,确定出晶体的c轴方向;并以c轴为基准快速寻找CGA晶体通光面且进行回摆精修的器件加工新方法。运用该方法,针对改进的垂直Bridgman法自发成核生长的CGA晶体,经定向切割、研磨和抛光,初步加工出CGA晶体SHG倍频器件粗坯,其相位匹配角θm=33.58°、方位角φ=0°,尺寸达5 mm×5 mm×8mm。

A new method of directional processing for CdGeAs2（CGA） crystal was presented. Based on the cleavage plans of CGA single crystals combined with standard pole figure and the X-ray diffraction pattern, the c axis of the single crystal can be quickly obtained by this new method. Using this method combined with directional cutting, grinding and polishing, the initial SHG devices of CGA crystals grown by an improved vertical Bridgman method through spontaneous nucleation have been fabricated. Its phase matched angle θm is 33.58°,azimuth angle φ is 0°, and the device size is 5 mm×5 mm×8 mm.