摘要
讨论集成电路内引线的设计。在一定电压下,利用Maple数学软件包为0.2μm长度的光滑内引线绘制了宽度为0.1μm时电阻和电流与不同高度的关系。内引线指定与集成电路AD8622的发射极相连接,因此流过此内引线的电流为Isr=0.350m A,于是确定了0.2μm长度的光滑内引线的两端电压降为0.2m V。当内引线长度为n×0.2μm时,两端电压降为n×0.2m V。本文提出,当引线中流过电流I(/m A)时,不同引线长度L(μm)、宽度W(μm)、和高度h(μm)引线两端所应加的设计电压的一个普适的简式:ΔU=0.2×I×0.1×L×0.061/(0.35W×0.2h)(m V),同L时要求引线长度方向上ΔU/L在几m V/μm数量级以下。当引线中有气泡时,在此电压下,讨论了气泡的半径对其电阻、电流的影响。获得了引线中的电流分布,并指出在引线中气泡的最大突起半径外缘电流表现出拥挤和气泡的半径对全引线电阻的影响。所提供的有关数据可用于集成电路内引线的设计。
In this paper, interconnect design for integrated currents is discussed. Relationships of resistance with a width of 0.1 gm for different heights and currents at a given volt drop are plotted for a 0.2μm length smooth copper lead. The lead is specified to connect with the integrated circuit AD8622 with its n=0.350mA to determine the volt drop=0.2mV. When the lead length is n×0.2μm, the volt drop=n×0.2mV. A simple formulas is put forward used for lead design : AU=0.2×1×0.1 ×L×0.061/(0.35× W×0.2×h) (mV), when a current l(mA)flows through a smooth copper lead with different length L(μm) ,width W(μm) and height h(μm). In the meantime, there is a demand: AU/L lower than an order of few mV/μm along the lead length. A lead with a stuck void is also discussed with the different void radius at this volt drop. The current distribution is obtained, showing current crowding outside of void edges and a great resistance with increase of their radius. These offered data are used for the integrated current design.
出处
《传感器世界》
2015年第5期12-17,共6页
Sensor World
关键词
集成电路
铜引线
气泡
电阻
电流
电位分布
integrated current
copper interconnect
void
resistance
current
potential distribution