期刊文献+

红外探测器集成OLED的光上转换器研究进展

Progress on Infrared Photodetector/OLED Optical Up-converter
下载PDF
导出
摘要 红外探测器集成OLED的光上转换器不仅可以结合红外探测器(PD)和有机发光二极管(OLED)的优势,提高转换效率,降低生产成本,而且可以实现红外光信号到可见光影像的转换,有广阔的应用前景。阐述了PDOLED光上转换器的基本原理,综述了光上转换器的研究现状,分析了影响转换效率的主要因素,并对其中的一个重要因素——中间界面的常用结构和作用机理的最新研究成果进行了重要归纳,随后介绍了该类杂化器件在探测成像方面的应用进展,最后提出了PD-OLED光上转换器的发展方向并对其应用前景进行了展望。 Infrared photodetector/OLED hybrid optical up-converter has an ability to convert infrared signal to visible light imaging.In addition,it can combine the advantages of infrared photodetector(PD)with ones of organic light emitting diode(OLED)to improve its conversion efficiency and lower production cost.Thus it has a significant application prospect.An initial illustration for the basic principle of the PD-OLED optical up-converter,and a subsequent summary of its research situation are presnted.Then the main factors influencing its conversion efficiency are analyzed and the latest research results are concluded for the conventional structures and acting mechanisms of intermediate interface,which is also an important factor among the ones.Afterwards,the application progress of detection imaging of the hybrid device was introduced.Finally,its future development directions and application prospect are commented.
出处 《材料导报》 EI CAS CSCD 北大核心 2015年第9期20-27,共8页 Materials Reports
基金 云南省应用基础研究计划重点项目(2013FA029) 973计划前期研究专项(2012CB326400) 云南大学校基金理工类项目(2013CG029)
关键词 光上转换器 红外探测器 OLED 转换效率 探测成像 optical up-converter, infrared photodetector, OLED, conversion efficiency, detection imaging
  • 相关文献

参考文献42

  • 1Liu H C, Gao M, Poole P J. 1.5 μm up-conversion device [J]. Electron Lett,2000,36(15) :1300.
  • 2Schietinger S, Aiehele T, Wang H Q, et al. Plasmon-en- hanced upconversion in single NaYF4 : Yb3+/Er~+ codoped nanocrystals[J]. Nano Lett, 2010,10 (1) : 134.
  • 3Olson M R, Russell K J, Narayanamurti V, et al. Linear photon upconversion of 400 meV in an A1GaInP/GaInP quantum well heterostructure to visible light at room tem- perature[J]. Appl Phys Lett,2006,88(16) :11081.
  • 4Chikamatsu M, Ichino Y, Takada N, et al. Light up-con- version from near-infrared to blue using a photoresponsiveorganic light-emitting device [J]. Appl Phys Lett, 2002,81 (4) : 769.
  • 5Ban D, Han S, Lu Z H, et al. Near-infrared to visible light optical upeonversion by direct tandem integration of organic light-emitting diode and inorganic photodetector [J]. Appl Phys Lett, 2007,90(9) : 31081.
  • 6Yang Y, Zhang Y H, Shen W Z, et al. Semiconductor in- frared up-conversion devices [J]- Prog Quant Electron, 2011,35(4) : 77.
  • 7Yang Y, Shen W Z, Liu H C, et al. Near-infrared photon upconversion devices based on GaNAsSb active layer lattice matched to GaAs[J]. Appl Phys Lett,2009,94(9):35041.
  • 8Luo H, Ban D, Liu H C, et al. Optical upeonverter with in tegrated heterojunction phototransistor and light-emitting diode[J]. Appl Phys Lett,2006,88(7):35011.
  • 9Kim D Y, Song D W, Chopra N, et al. Organic infrared up- conversion device[J]. Adv Mater, 2010,22 (20) : 2260.
  • 10Ban D, Luo H, Liu H C, et al. Optimized GaAs/A1GaAs light-emitting diodes and high efficiency wafer-fused optical up-conversion devices[J]. J Appl Phys,2004,96(9) : 5243.

二级参考文献37

  • 1姬荣斌,唐利斌,张筱丹.有机半导体探测器材料的研究展望[J].红外技术,2006,28(1):2-6. 被引量:4
  • 2甄红楼,熊大元,周旭昌,李宁,邵军,陆卫.红外-近红外波长变换器件p-QWIP-LED研究[J].中国科学(G辑),2006,36(3):327-336. 被引量:7
  • 3Wu Chunya, Zhao Ying. A simulation method for a-Si PIN/OLED coupling devices[A] . Proceedings of The 7th ASID Symposium on Information Display, 2002,217.
  • 4Brammer T, Striebig H. Recombination lifetime in microcrystalline silicon absorbers of highly efficient thin-film solar cells[C]. MRS Spring Meeting, San Francisco, 2000.
  • 5Vettel O, Finger F. Intrinsic microcrystalline silicon:A new material for photovoltaics[J]. Solar Energy Materials and Solar Cells, 2000, 62: 98- 108.
  • 6Chinese Republic of China GB/T4965. 3- 1996 and International idtIEC: 1986.
  • 7Campbell A J. Space-charge limited conduction with traps in poly-phenylene-inylene-light emitting diodes[J]. Appl. Phys., 1997, 82(12): 6326.
  • 8Wu C, Zhao Y, Xiong S, et al. Design on a novel a-Si PIN/OLED image sensor and display device[C].SID'99, Saint Jose, USA, 1999, 328.
  • 9Liu H C,Gao M, Poole P J. 1. 5μm up-conversion device[J]. Electron. Lett. ,2000, 36(15): 1 300-1 301.
  • 10Tang C W, Vanslyke S A. Organic electro-luminescent diode[J]. Appl. Phys. Lett., 1987, 51(12): 913-915.

共引文献6

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部