摘要
The organic single-crystal field-effect transistors using anthracene derivative, H-Ant as an active layer with source/drain electrodes decorated by metal charge transfer salt(Cu TCNQ) were fabricated. We demonstrated that this bottom-contact structure displayed an obvious improvement in the electrical characteristics relative to their pristine copper and top-contact gold electrode counterparts. This observation could be ascribed to the lower contact resistance resulting from the energetic match between electrodes and semiconductor.
The organic single-crystal field-effect transistors using anthracene derivative, H-Ant as an active layer with source/drain elec- trodes decorated by metal charge transfer salt （CuTCNQ） were fabricated. We demonstrated that this bottom-contact structure displayed an obvious improvement in the electrical characteristics relative to their pristine copper and top-contact gold elec- trode counterparts. This observation could be ascribed to the lower contact resistance resulting from the energetic match be- tween electrodes and semiconductor.
基金
supported by the National Natural Science Foundation of China(20721061,51033006,51003107,91027043)
the China-Denmark Co-project,TRR61(NSFC-DFG Transregio Project)
the National Basic Research Program of China(2011CB808400,2011CB932300,2009CB930400)and Chinese Academy of Sciences
