摘要
Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy （HVPE）, Na-flux method, and am- monothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms of GaN by Na-flux and ammonother- mal methods are compared with those of HVPE. The mechanical behaviors of dislocation in bulk GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spectroscopy. In the last part, the progress in growing some devices on GaN substrate by homo-epitaxy is introduced.
Three main technologies for bulk GaN growth, i.e., hydride vapor phase epitaxy （HVPE）, Na-flux method, and am- monothermal method, are discussed. We report our recent work in HVPE growth of GaN substrate, including dislocation reduction, strain control, separation, and doping of GaN film. The growth mechanisms of GaN by Na-flux and ammonother- mal methods are compared with those of HVPE. The mechanical behaviors of dislocation in bulk GaN are investigated through nano-indentation and high-space resolution surface photo-voltage spectroscopy. In the last part, the progress in growing some devices on GaN substrate by homo-epitaxy is introduced.
基金
Project supported by the National Natural Science Foundation of China(Grant Nos.61325022 and 11435010)
the National Basic Research Program of China(Grant No.2012CB619305)
the National High Technology Research and Development Program of China(Grant No.2014AA03260)
