氮化铝基陶瓷覆铜板的制作及其应用

Manufacturing Technologies of AIN DBC Substrates and Its Applications

氮化铝（AlN）陶瓷是一种共价键较强的非氧化合物，具有良好的化学稳定性，因此AlN陶瓷很难在高温和氧气氛下与铜（Cu）直接键合制成氮化铝基陶瓷覆铜板。若在AlN基片表面上预制一定厚度、且非常致密的氧化铝（A1203）层后，就能借鉴Cu箔和A1203基片高温键合工艺制作性能优良的AlNDBC基板。文中简要阐述了银河公司在制作AINDBC基板过程中采用的化学氧化法，高温氧化法，循环温差交替降温法，磁控溅射法等工艺技术，还简要介绍了本公司生产的AINDBC基板的规格和主要技术参数及其在电力半导体模块中的应用实例。

Aluminum Nitride （A1N）ceramic substrate is a oxygen-free compound with stronger covalent bond,It has fine chemical stability,Therefore A1N ceramic substrate directly bonds with copper foil under the high temperature and given oxygen atmosphere is very difficult for manufacturing A1N DBC substrates.If a layer A1203 of certain thickness and very meticulous density are prepared beforehand on the surface of A1N substrate, Using bonded technologies of manufacturing A1203 DBC substrate, the A1N ceramic substrate and Cu foil will closely be bonded under high temperature to manufacture a excellent performance A1N DBC substrate.The chemical oxidation,high temperature oxidation,temperature reduction of cycling temperature difference and magnetron controlled sputtering technologies are briefly introduced in this paper for fabricating A1N DBC substrate.The paper also simply explains the specifications and main technical parameters of A1N substrate made by Yinhe company,The living examples of using A1N DBC substrates in the power semiconductor modules are introduced.