Zr-Co薄膜中的氦行为

Behavior of He in Zr-Co Films

Zr-Co是迄今为止研究较多、性能较好的储氚材料，材料中的氚会自发衰变生成3He．随着材料中。He的积累，氦会逐渐聚集成泡，这将对材料的储氚性能造成严重的破坏．温度和氦浓度将显著影响材料中氦的行为．本文采用4He模拟氚衰变生成的。He在材料中的行为，用磁控溅射的方法制备了不同氦含量的Zr-Co薄膜，并用卢瑟福背散射（RBS）方法分析薄膜的元素组成及厚度，弹性反冲探测（ERD）方法分析样品的氦含量及深度分布．分别采用恒温退火和动态热解析方法研究了4He在Zr-Co样品中的滞留和存在状态，并用X射线衍射（XRD）方法分析其微观结构．

The Zr-Co alloy is a promising tritium （T）-storage material and has been extensively studied. The helium decayed by T will gather to form bubbles, which are very harmful to the material. The temperature and helium content strongly affect the behavior of helium in the material. In this study, ＇He was absorbed in Zr-Co films by magnetron sputtering deposition to simulate the behavior of the 3He decayed by T in T-storage materials. Different He ratio samples were fabricated by radio frequency （RF） magnetron sputtering deposition. The film composition and He ratio in Zr-Co were determined by Rutherford back scattering （RBS） and elastic recoil detection （ERD）, respectively. Thermal desorption spectroscopy experiments and X-ray diffraction （XRD） analysis were used to investigate the states of the He in the samples and the microstructure of the samples, respectively.