期刊文献+

Non-equilibrium Phases Formed in Cu–In–Se–Te System Synthesized by Melt-Quench Method

Non-equilibrium Phases Formed in Cu–In–Se–Te System Synthesized by Melt-Quench Method
原文传递
导出
摘要 Non-equilibrium phases formed in melt-quenched CuIn(SexTe1-x)2 system, where x = 0.1, 0.2, 0.4, 0.5, 0.6, 0.8 and 0.9, have been studied using Rietveld refinement of the crystal structure and Raman spectroscopy. Results of structure refinement have showed that all the samples, except the CuIn(Se0.1Te0.9)2, are heterogeneous. All the observed non-equilibrium phases are quaternary system and are found to have chalcopyrite structure (I42d), in accordance with the CuInTe2-CuInSe2 phase diagram. The lattice constants deduced from the refinement have showed linear variation with Se content. A detailed analysis of the characteristic Al modes present in the Raman spectrum of individual sample has corroborated the results obtained from the structure analysis. The position of Al mode of individual phase is found to vary linearly with Se content, which suggests that CuIn(SexTe1-x)2 system exhibits single-mode behaviour. Non-equilibrium phases formed in melt-quenched CuIn(SexTe1-x)2 system, where x = 0.1, 0.2, 0.4, 0.5, 0.6, 0.8 and 0.9, have been studied using Rietveld refinement of the crystal structure and Raman spectroscopy. Results of structure refinement have showed that all the samples, except the CuIn(Se0.1Te0.9)2, are heterogeneous. All the observed non-equilibrium phases are quaternary system and are found to have chalcopyrite structure (I42d), in accordance with the CuInTe2-CuInSe2 phase diagram. The lattice constants deduced from the refinement have showed linear variation with Se content. A detailed analysis of the characteristic Al modes present in the Raman spectrum of individual sample has corroborated the results obtained from the structure analysis. The position of Al mode of individual phase is found to vary linearly with Se content, which suggests that CuIn(SexTe1-x)2 system exhibits single-mode behaviour.
机构地区 Department of Physics
出处 《Acta Metallurgica Sinica(English Letters)》 SCIE EI CAS CSCD 2015年第5期567-579,共13页 金属学报(英文版)
关键词 CHALCOGENIDES Crystal growth Phase coexistence X-ray diffraction Crystal structure Raman spectroscopy Chalcogenides Crystal growth Phase coexistence X-ray diffraction Crystal structure Raman spectroscopy
  • 相关文献

参考文献53

  • 1S. Siebentritt, U. Rau (eds.), Wide-Gap Chalcopyrites (Springer, Berlin, 2006).
  • 2P.Y. Yu, D.H.C.M. Cardona, Fundamentals of Semiconductors: Physics and Materials Properties (Springer, Berlin, 2010).
  • 3D. Xue, K. Betzler, H. Hesse, Phys. Rev. B 62, 13546 (2000).
  • 4D.N. Nikogosian, Nonlinear Optical Crystals: A Complete Survey (Springer, New York, 2005).
  • 5P. Jackson, D. Hariskos, E. Lotter, S. Paetel, R. Wuerz, R. Menner, W. Wischmann, M. Powalla, Prog. Photovolt. 19, 894 (2011).
  • 6S. Marsillac, P.D. Paulson, M.W. Haimbodi, R.W. Birkmire, W.N. Shafarman, Appl. Phys. Lett. 81, 1350 (2002).
  • 7K. Yamada, N. Hoshino, T. Nakada, Sci. Technol. Adv. Mater. 7, 42 (2006).
  • 8V. Izquierdo-Roca, X. Fontane, J. Alvarez-Garcia, L. Cairo- Barrio, A. Perez-Rodriguez, J.R. Morante, C.M. Ruiz, E. Saucedo, V. Bermudez, Appl. Phys. Lett. 94, 061915 (2009).
  • 9I.H. Choi, S.H. Eom, P.Y. Yu, J. Appl. Phys. 87, 3815 (2000).
  • 10R. Diaz, M. Leon, F. Rueda, J. Vac. Sci. Technol. A 10, 295 (1992).

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部