期刊文献+

一种高精度基准源电路 被引量:7

A high precision bandgap reference
下载PDF
导出
摘要 基于90 nm CMOS标准工艺,设计了一种低温漂的带隙基准源电路。一种结构新颖的温度曲率校正电路被采用,作为一级温度补偿电路的曲率校正电路。Hspice仿真结果表明:所设计电压源在温度-20℃^+120℃范围内,平均温度系数约为2.2 ppm/℃,获得了一个低压高精度的带隙基准电压源。 The design of the novel currature correction temperature compensation bandgap reference circuit as the currature cor- rection circuit of the first order temperature compensation bandgap reference circuit, and get a better output and lower average tem- perature coefficient, which is fabricated with 90 nm CMOS technology. Result from HSPICE simulation shows that the circuit has an average temperature coefficient about 2.2 ppm/℃ between -20 ℃ to 120 ℃.
作者 董大伟
出处 《电子技术应用》 北大核心 2015年第6期45-46,50,共3页 Application of Electronic Technique
关键词 带隙基准源 温度系数 曲率校正 bandgap reference temperature coefficient curvature correction
  • 相关文献

参考文献4

二级参考文献10

  • 1Giustolisi G,Palumbo G,Criscione M,et al.A low-voltage low-power voltage reference based on subthreshold MOSFET[J].IEEE J SSC,2003;38(1):151-154.
  • 2Laker K R,Sansen W M C.Design of Analog Integrated Circuits and Systems[M].McGraw-Hill Inc.1994.
  • 3Enz C C,Krummenacher F,Vittoz E A.An analytical MOS transistor model valid in all regions of operation and dedicated to low-voltage and low current applications[J].Special Issue of the Analog Integrated Circuits and Signal Processing Journal on Low-voltage and Low Power Design,1995;8:83-114.
  • 4Serra-Graells F,Huertas J L.Sub-1-V CMOS proportional-to-absolute temperature references[J].IEEE J SSC,2003;38(1):84-88.
  • 5Leung K N,Mok P K T.A-sub-1-V 15 ppm/°C CMOS bandgap voltage reference without requiring low threshold voltage device[J].IEEE J SSC,2002;37(4):526-530.
  • 6Boni A.Op-amp and startup circuits for CMOS bandgap references with near 1-V supply[J].IEEE J SSC,2002;37(10):1 339-1 343.
  • 7Banba H,Shiga H,Umezawa A,et al.A CMOS bandgap reference circuits with sub-1-V operation[J].IEEE J SSC,1999;34(5):670-674.
  • 8M Gunawan, G Meijer, J Fonderie, and H. Huijsing. A curvature corrected low-voltage bandgap reference, [J] IEEE Solid-State Circuits,vol. 28, pp. 667-670, June 1993.
  • 9Song B. S and. Gray. P. R A precision curvature-compensated CMOS band gap reference,[J] IEEE Solid-State Circuits, vol. 18, pp. 634-643,Dec. 1983.
  • 10Gray P R, Meyer R G.. Analysis and design of analog integrated circuits [J] 1993,327-347.

共引文献16

同被引文献57

  • 1朱樟明,杨银堂.一种10-ppm/~oC低压CMOS带隙电压基准源设计[J].电路与系统学报,2004,9(4):118-120. 被引量:21
  • 2王东兴,江连会.一种精密稳压的150V直流电源电路[J].压电与声光,2004,26(5):380-382. 被引量:2
  • 3胡诞康.高精度稳压电源[J].电测与仪表,1990,27(4):16-17. 被引量:1
  • 4李国辉,刘阳.基于C8051F005单片机电压数据采集[J].兵工自动化,2007,26(10):77-78. 被引量:3
  • 5MAGNELLI L,CRUPI F,CORSONELLO P,et al. A 2.6 nW, 0.45 V temperature-compensated subthreshold CMOSvoltage referenced[J].IEEE Journal of Solid-State Circuits,2011,46(2) . 465-474.
  • 6LEE S,LEE H?WOO J K.Low-voltage bandgap reference with output-regulated current mirror in 90 nm CMOS[J].Electronics Letters,2010,46(14) : 976-977.
  • 7LAM Y H, KI W H. CMOS bandgap references with self-biased symmetrically matched current-voltage mirror andextension of sub-l-V design[J]. IEEE Transactions on, Very Large Scale Integration Systems,2010,18(6) : 857-865.
  • 8IVANOV V,BREDERLOW R,GERBER J. An ultra low power bandgap operational at supply from 0.75 V[J]. IEEEJournal of Solid-State Circuits, 2012,47(7) : 1515-1523.
  • 9HE J ,CHEN D, GEIGER R. Systematic characterization of subthreshold-MOSFETs-based voltage references for ultralow power low voltage applications [C]// 53rd IEEE International Midwest Symposium on Circuits and Systems.IEEE, 2010: 280-283.
  • 10LEUNG K N,MOK P K T,LEUNG C Y. A 2-V 23-pA 5.3-ppm/C curvature-compensated CMOS bandgap voltagereference[J]. IEEE Journal of Solid-State Circuits,2003,38(3) : 561-564.

引证文献7

二级引证文献16

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部