部分耗尽SOI晶体管电离辐射损伤的物理模型

Physical Model for Ionizing Radiation Damage in Partially Depleted SOI Transistors

从氧化层俘获空穴和质子诱导界面态形成的物理机制出发,建立部分耗尽SOI器件总剂量辐射诱导的氧化层陷阱电荷和界面态物理模型,模型可以很好地描述辐射诱导氧化层陷阱电荷和界面态与辐射剂量的关系,并从实验上对上述模型结果给予验证.结果表明,在实验采用的辐射剂量范围内,辐射诱导产生的氧化物陷阱电荷与辐射剂量满足负指数关系.模型中如果考虑空穴的退火效应,可以更好地反映高剂量辐照下的效应;辐射诱导产生的界面态与辐射剂量成正比例关系.

For physical process of holes trapped in oxide and interface trap buildup induced by proton, physical models of oxide trapped charge and interface trap charge in partially depleted SOI transistors after ionizing radiation exposure are proposed. Relations between oxide trapped charge density or interface trap charge density and radiation dose are described well. These models are validated by radiation experiments. It shows that within confines of experimental dose, oxide trapped charge density induced by radiation rays depends negative exponential on radiation dose. Results for high total dose as annealing is taken into account exhibits excellent agreement with experimental data. Interface trap charge density induced by radiation rays is linear in dose within confines of experimental dose.