变温四探针电阻率测试仪的开发及本科教学实践

Design of Temperature Controlling Four-probe Tester and its Practice on Undergraduate Course Teaching

为了便于测量半导体薄膜在变温下的电阻率,满足本科生《半导体材料》课程的教学要求,利用现有一台室温四探针测试仪和一台恒温加热台,开发了一台变温四探针电阻率测量仪,测量温度范围从室温到300oC。通过磁控溅射法制备了热致相变材料二氧化钒薄膜,利用自组装的变温四探针测试仪测量了该薄膜在不同温度下的电阻率,得到了相变转变温度。教学实践表明:该变温四探针能够很好的满足关于半导体材料电阻率与温度变化关系实验测量的教学大纲要求,取得了良好的教学效果。

For the purposes of measuring semiconductor conductivity on variable temperature, meeting the requirements of undergraduate teaching of the semiconductor material, a temperature control ing four-probe tester was developed according to a room-temperature four probe tester and a constant temperature heating station, with the temperature range from room temperature to 300 oC. The thermal phase change material vanadium dioxide was prepared by magnetron sputtering, and measured by the self-assembly temperature control ing four-point probe tester. Teaching practice shows that the temperature control ing four-point probe tester can reach the requirement of teaching outline and test the relation between resistivity and temperature of semiconductor materials.