水热法生长宽禁带氧化锌单晶研究进展

Research Progress on Hydrothermal Growth of Wide Bandgap ZnO Single Crystal

罗列了第三代半导体材料宽禁带氧化锌材料的发展历史与应用前景,总结了ZnO的结构性能、应用方向和制备方法,介绍了宽禁带氧化锌半导体晶体相对于氮化镓材料具有的显著优势:即具有更大的激子结合能(60meV),更低的激射阀值,有望实现室温下高效低阈值的紫外激光。氧化锌相比已获得巨大成功的氮化镓来说其原材料成本极低,环境友好,合成技术门槛低。目前氧化锌半导体材料的研究难点和热点还集中在p型掺杂材料和器件的研发方面。氧化锌优良的物理特性使其成为新一代主流宽带隙半导体材料,生长大尺寸高结晶质量的ZnO单晶对基础研究还是实际应用都有重要意义,文章还着重介绍了水热法合成氧化锌宽禁带半导体单晶的方法和技术优势,展示了我单位在水热法氧化锌单晶合成方面的最新研究进展。

This article lists the development history and application prospect of the third generation of semiconductor material-wide bandgap zinc oxide single crystal,and sum-marizes the structural performance,application direction and preparation technique of ZnO.The article also introduces the distinct advantages of wide bandgap zinc oxide single crystal compared to gallium nitride which are as follow：more powerful exciton binding energy （60 mev）,lower lasing threshold,very likely to achieve ultraviolet laser of high efficiency and low threshold under indoor temperature.Compared to the very successful gallium nitride,the cost of the raw material for ZnO is extremely low and it is environ-mental friendly and easy for synthesis.For the moment,the difficult and hot issues of the research on ZnO semiconductor material focus on the research and development of p-type doping materials and devices.Excellent physical properties of zinc oxide have made it a new generation of mainstream broadband gap semiconductor materials.Growth of zinc oxide single crystal of large size and high crystallization quality has a great significance for both of basic research and practical application.The method and techical advantage of hy-drothermal synthesis of wide bandgap zinc oxide single crystal have been specially intro-duced in this article which demonstrates our latest research development of hydrothermal synthesis of wide bandgap zinc oxide single crystal.