硅量子点的表面改性技术

Surface Modification Technology of Silicon Quantum Dots

硅量子点具有新颖的光电性能,有望在光电、光伏和生物标记等领域发挥重要作用。为了使硅量子点表现出优异而稳定的光电性能,能够有效地被应用,通常需要对硅量子点的表面进行改性。针对表面起初被氢或氯钝化的硅量子点,详细地介绍了最近国内外在硅量子点表面改性方面的研究进展,重点介绍了表面改性技术对硅量子点的分散和发光等性能的影响,分析讨论了最具代表性的表面改性技术——氢化硅烷化的机理以及其对硅量子点性能的影响,提出了今后发展硅量子点表面改性技术的方向和应该注意的问题。

Silicon quantum dots exhibit electronic and optical properties, which may find applications in many fields such as optoelectronic, photovoltaics and bioimaging. Silicon quantum dots usually need surface modification to render excellent and stable optoelectronic properties and enable effective use. The surface modification techniques for silicon quantum dots that are originally passivated by hydrogen or chlorine is introduced. The progress about surface modification in domestic and overseas are also presented. The effect of the surface modification on the dispersity and optical properties of silicon quantum dots are introduced. Hydrosilylation is one of the most important modification techniques, the mechanism and influence of it are discussed in detail. The directions for the development of the silicon quantum dot surface modification are proposed. The challenges for further advancing the surface modification techniques of silicon quantum dots are also pointed out.