摘要
An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one- diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.
An altemative way is proposed to interpret I-V characteristics of GalnP single-junction solar cells by position-dependent leakage ofphotocurrent. With this approach, the I-V curves of solar cells under non-uniform illumination are well analyzed. The effective spreading resistance is also extracted to understand the dynamic behavior of between the open-circuit voltage and short-circuit current points. The conditions under which the one- diode model will fail are addressed in detail. These analyses are also applicable for a characterization of the I-V curves with lateral voltage distribution under uniform illumination.
基金
Project supported by the Union Innovation Projects of Jiangsu Province(No.BY2011182)
CAS,the National Basic Research Program(No.2012CB619305)
the National Natural Science Foundation of China(Nos.51272275,51302305,61376065)
