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β-FeSi_2 films prepared on 6H-SiC substrates by magnetron sputtering 被引量:1

β-FeSi_2 films prepared on 6H-SiC substrates by magnetron sputtering
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摘要 β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of/%FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to%FeSi2 phase as the annealing temperature is increased from 500 to 900 ℃ for 5 min and the optimal annealing temperature is 900 ℃. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is βat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the tJ-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 ℃ for 5 min. β-FeSi2 thin films have been successfully prepared by magnetron sputtering and post rapid thermal annealing method on 6H-SiC (0001) substrates using a FeSi2 target and a Si target. X-ray diffraction (XRD) and Raman spectroscopy are applied to analyze the formation of/%FeSi2 films. XRD spectra reveal that the amorphous FeSi2 films are transformed to%FeSi2 phase as the annealing temperature is increased from 500 to 900 ℃ for 5 min and the optimal annealing temperature is 900 ℃. The formation of β-FeSi2 is also confirmed by Raman spectroscopy. Scanning electron microscope (SEM) observations indicate that the film is βat, relatively compact and the interface between β-FeSi2 and 6H-SiC is clear. Atomic force microscope (AFM) measurements demonstrate that the surface roughness confirmed by the root mean square (RMS) of the tJ-FeSi2 film is 0.87 nm. Near-infrared spectrophotometer observation shows that the absorption coefficient is of the order of 105 cm-1 and the optical band-gap of the β-FeSi2 film is 0.88 eV. The β-FeSi2 film with high crystal quality is fabricated by co-sputtering a FeSi2 target and a Si target for 60 min and annealing at 900 ℃ for 5 min.
出处 《Journal of Semiconductors》 EI CAS CSCD 2015年第6期29-34,共6页 半导体学报(英文版)
基金 Project supported by the National Natural Science Foundation of China(No.51177134) the Natural Science Basic Research Plan in Shaanxi Province of China(No.2015JM6286)
关键词 β-FeSi2 films 6H-SiC substrates magnetron sputtering X-ray diffraction (XRD) β-FeSi2 films 6H-SiC substrates magnetron sputtering X-ray diffraction (XRD)
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