摘要
A new electroluminescent material tris- [5-choloro-8-hydroxyquinoline] aluminum has been synthesized and characterized. Solution of this material AI（5-Clq）3 in toluene showed absorption maxima at 385 nm which was attributed to the moderate energy （π-π＊） transitions of the aromatic rings. The photoluminescence spectrum of AI（5-Clq）3 in toluene solution showed a peak at 522 nm. This material shows thermal stability up to 400 ℃. The structure of the device is ITO/0.4 wt%F4-TCNQ doped α-NPD （35 nm） / AI（5-Clq）3 （30 nm） / BCP （6 nm）/ Alq3 （30 nm） / LiF （1 nm） / A1 （150 nm）. This device exhibited a luminescence peak at 585 nm （CIE coordinates, x = 0.39, y = 0.50）. The maximum luminescence of the device was 920 Cd/m2 at 25 V. The maximum current efficiency of OLED was 0.27 Cd/A at 20 V and maximum power efficiency was 0.04 lm/W at 18 V.
A new electroluminescent material tris- [5-choloro-8-hydroxyquinoline] aluminum has been synthesized and characterized. Solution of this material AI（5-Clq）3 in toluene showed absorption maxima at 385 nm which was attributed to the moderate energy （π-π＊） transitions of the aromatic rings. The photoluminescence spectrum of AI（5-Clq）3 in toluene solution showed a peak at 522 nm. This material shows thermal stability up to 400 ℃. The structure of the device is ITO/0.4 wt%F4-TCNQ doped α-NPD （35 nm） / AI（5-Clq）3 （30 nm） / BCP （6 nm）/ Alq3 （30 nm） / LiF （1 nm） / A1 （150 nm）. This device exhibited a luminescence peak at 585 nm （CIE coordinates, x = 0.39, y = 0.50）. The maximum luminescence of the device was 920 Cd/m2 at 25 V. The maximum current efficiency of OLED was 0.27 Cd/A at 20 V and maximum power efficiency was 0.04 lm/W at 18 V.
