摘要
A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.
A novel slow-down set waveform is proposed to improve the set performance and a 1 kb phase change random access memory chip fabricated with a 13nm CMOS technology is implemented to investigate the set performance by different set programming strategies based on this new set pulse. The amplitude difference （I1 - I2） of the set pulse is proved to be a crucial parameter for set programming. We observe and analyze the cell characteristics with different I1 - I2 by means of thermal simulations and high-resolution transmission electron microscopy, which reveal that an incomplete set programming will occur when the proposed slow-down pulse is set with an improperly high I1 - I2. This will lead to an amorphous residue in the active region. We also discuss the programming method to avoid the set performance degradations.
基金
Supported by the Strategic Priority Research Program of Chinese Academy of Sciences under Grant No XDA09020402
the National Key Basic Research Program of China under Grant Nos 2013CBA01900,2010CB934300,2011CBA00607,and 2011CB932804
the National Integrate Circuit Research Program of China under Grant No 2009ZX02023-003
the National Natural Science Foundation of China under Grant Nos 61176122,61106001,61261160500,and 61376006
the Science and Technology Council of Shanghai under Grant Nos 12nm0503701,13DZ2295700,12QA1403900,and 13ZR1447200
