摘要
The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si su bstrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7 × 10^-7 A/mm at -10 V. After annealing, the leakage current is decreased to 3.7 × 10^-7 A/mm for 400℃ or 4.6 × 10^-8 A/mm for 500℃, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. The Cu/Ni for 80/20 nm shows a low onset voltage, while the Cu/Ni for 20/80 nm shows a low leakage current. Both breakdown voltages are above 720 V.
The electrical characteristics of Cu and Ni/Al AlGaN/GaN Schottky barrier diodes on Si su bstrates are compared. The onset voltage of Cu Schottky diodes is about 0.4 V less than the Ni/Al contact. For the Cu/Ni Schottky contact, the leakage current is 4.7 × 10^-7 A/mm at -10 V. After annealing, the leakage current is decreased to 3.7 × 10^-7 A/mm for 400℃ or 4.6 × 10^-8 A/mm for 500℃, respectively. The electrical property is affected by the thickness ratio of Cu to Ni. The Cu/Ni for 80/20 nm shows a low onset voltage, while the Cu/Ni for 20/80 nm shows a low leakage current. Both breakdown voltages are above 720 V.
基金
Supported by the National High Technology Research and Development Program of China under Grant No 2014AA032606 and No 2014AA032602
the Beijing Municipal Science and Technology Project under Grant No Z131100005913001
