SiNx掩膜对GaN外延薄膜性质的影响

Si Nx mask to GaN epitaxial film properties

研究了纳米量级的多孔SiNx插入层的生长位置对高质量GaN外延薄膜性质的影响。测量结果表明:当把SiNx插入层生长在GaN粗糙层上,能够得到最好的晶体质量;SiNx插入层的生长位置对GaN薄膜的应变大小基本没有影响;然而,插入层的位置改变了薄膜中的本征载流子浓度。

The research of nanometer level on growth of porous SiNx inserted into the layer of high quality GaN epitaxial film properties.Measurement results show that when inserted the SiNx layer growth on the rough GaN layer,can get the best crystal quality.The growth of the SiNx inserted into the layer position of GaN film strain had little influence upon size; However,the position of the insertion layer the intrinsic carrier concentration in the film.