摘要
Surface recombination represents a handicap for high-efficiency solar cells. This is especially important for nanowire array solar cells, where the surface-to-volume ratio is greatly enhanced. Here, the effect of different passivation materials on the effective recombination and on the device performance is experimentally analyzed. Our solar cells are large area top-down axial n-p junction silicon nanowires fabricated by means of Near-Field Phase-Shift Lithography （NF-PSL）. We report an efficiency of 9.9% for the best cell, passivated with a SiO2/SiNx stack. The impact of the presence of a surface fixed charge density at the silicon/oxide interface is studied.
表面再结合为高效率的太阳能电池代表一个缺陷。这为 nanowire 数组太阳能电池是特别重要的，在 surface-to-volume 比率极大地被提高的地方。这里，有效再结合上并且在设备表演上的不同钝化材料的效果试验性地被分析。我们的太阳能电池是自顶向下的轴的 n-p 连接硅 nanowires 借助于近地的阶段移动平版印刷术(NF-PSL ) 制作了的大区域。我们为最好的房间报导 9.9% 的效率，与 SiO 使钝化 < 潜水艇 class= “ a-plus-plus ” > 2 </sub>/SiN<sub class= “ a-plus-plus ” > x </sub> 栈。表面的存在的影响在硅 / 氧化物接口修理了费用密度被学习。
