Ar^+入射Cu靶溅射产额的计算与分析

Calculation and Analysis of Sputtering Yield of Copper Target by Incident Argon Ion

利用SRIM软件模拟Ar+以不同能量和角度溅射铜靶,根据计算结果得出溅射产额随入射离子能量和角度的变化规律:溅射产额在低能区(0.1-10 ke V)随入射离子能量的增加而增大,在高能区(10-100 ke V)随入射离子能量的增加变化不大且逐渐减小;溅射产额随着离子入射角的增加逐渐增大,且在60°-80°之间有一极大值,而当入射角再变大时溅射产额急剧下降;入射角在0°-60°范围内,相对溅射产额与入射角余弦值近似成反比。溅射产额的变化规律可利用级联碰撞理论做出合理解释。

The sputtering process of copper target using argon ion at different energies and angles were simulated by SRIM software, according to the calculated results, the rules of sputtering yield variation with incident ion＇s energy and angle were obtained as following,the sputtering yield increased in the low-ener- gy region （0. 1 - 10 keV） with the rising energy of incident ion,but changed little and decreased gradual- ly in the high-energy region（ 10 -100 keV）. With the rise of incident ion＇s angle the sputtering yield in- creased gradually, it reached a maximum value when the incident angle was in the region from 60°to 80°, and decreased sharply. In the range from of 0° to 60°, the relative sputtering yield was inversely propor- tional to the cosine value of incident angle. The variation of the sputtering yield could be explained using the theory of cascade collision.