电沉积Cu/Zn金属预制层后续低硒压硒化制备CZTSe薄膜

CZTSe THIN FILM PREPARED BY LOW PRESSURE SELENIZATION ON ELECTRODEPOSITED Cu/Zn METAL LAYER

在玻璃/Mo衬底上采用恒电流顺序电沉积Cu-Zn金属预制层,后续在SnSe_x(x=1,2)气氛较低硒压条件下硒化制备CZTSe薄膜。SnSe_x(x=1,2)分压由Sn源温度控制,Se分压由Se源温度控制,Se源及样品温度分别为270℃和570℃。采用3种不同的硒化处理工艺对金属预制层进行硒化处理。通过SEM及EDS表征CZTSe薄膜的结构、形貌及成分。综合SEM及EDS测试结果,确定CZTSe和Mo界面处MoSe_2相很薄。实验发现较低SnSe_x(x=1,2)气氛条件下可实现高温低Se压硒化CuZn预制层制备单相CZTSe薄膜,经工艺优化得到效率为7.6%的CZTSe太阳电池。

Cu/Zn metal layer was deposited on glass/Mo substrate by constant current electrodeposition method, then CZTSe thin film was prepared by selenization in SnSex （x=1, 2） atmosphere with low selenium pressure. Se partical pressure in SnSex（x=l, 2） was controlled by the Se temperature, the sample temperature and the Se temperature were 570 ℃ and 270 ℃ , respectively. Three selenization processes were applied, and the structure, morphology and composition of CZTSe thin films were characterized by SEM and EDS. The very thin MoSes layer in interface between CZTSe and Mo was confirmed by SEM and EDS tests. It was found that CZTSe thin films could be prepared by seleniding CuZn metal layer in lower SnSex（x=1, 2） atmosphere with high temperature and low selenium pressure, CZTSe thin film solar cell with 7.6% of efficiency was prepared by the optimization process.