摘要
We report a compact 2×2 Mach-Zehnder interferometer （MZI） electro-optic switch fabricated on a silicon- on-insulator using standard complementary metal-oxide semiconductor （CMOS） processes. With a short modu- lation arm length of 200μm, the crosstalk is reduced to -22 dB by the new modulation scheme of push-pull modulation with a pre-biased π2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.
We report a compact 2×2 Mach-Zehnder interferometer （MZI） electro-optic switch fabricated on a silicon- on-insulator using standard complementary metal-oxide semiconductor （CMOS） processes. With a short modu- lation arm length of 200μm, the crosstalk is reduced to -22 dB by the new modulation scheme of push-pull modulation with a pre-biased π2 phase shift. The new modulation scheme can also work with a fast switching time of about 5.4 ns.
基金
supported by the National Basic Research Program of China(Grant No.2011CB301701)
the National High Technology Research and Development Program of China(Grant Nos.2013AA014402,2015AA016904,and 2012AA012202)
the National Natural Science Foundation of China(Grant Nos.61107048 and 61275065)
