摘要
采用溶胶-凝胶法在Pt/Ti/SiO2/Si衬底上成功制备了不同摩尔分数La掺杂BaTi2O5薄膜。研究了不同La掺量的BaTi2O5(Ba1-xLaxTi2O5)薄膜的物相组成、介电性能和铁电性能。XRD分析结果表明,采用溶胶-凝胶法经过850℃退火制备的Ba1-xLaxTi2O5(0≤x≤0.01)薄膜样品结晶较好,无杂相出现。La掺杂提高了薄膜的介电性能和铁电性能,当掺杂量0.004≤x≤0.008,测试频率为1MHz时,薄膜的介电常数约为630;当x=0.004时,掺La的BaTi2O5薄膜的剩余极化值最大,2Pr=2.1μC/cm2。
La doped BaTi2O5 thin films were prepared by a sol-gel method on Pt/Ti/SiO2/Si substrstes. The effect of the La content on electrical properties of La doped P, aTi2O5 （Ba1-x La, Ti2O5 ） thin films was investigated. The single- phase Ba1-xLaxTi2O5 （0≤x≤0. 01 ） thin films were obtained at 850 ℃. The dielectric and ferroelectric properties were improved due to the doping of La, the Ba1-xLax Ti2 O5 thin films with 0. 004≤x≤0. 008 had the maximum dielectric constant of 630 at 1 MHz, and the Ba1-xLax Ti2O5 thin films with x= 0. 004 had the maximum remnant polarization （2Pr） of 2. 1 t℃/cmz.
出处
《武汉理工大学学报》
CAS
北大核心
2015年第1期1-5,共5页
Journal of Wuhan University of Technology
基金
国家自然科学基金(51172170)
