期刊文献+

Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition

Cytotoxicity of Boron-Doped Nanocrystalline Diamond Films Prepared by Microwave Plasma Chemical Vapor Deposition
下载PDF
导出
摘要 Boron-doped nanocrystalline diamond(NCD) exhibits extraordinary mechanical properties and chemical stability,making it highly suitable for biomedical applications.For implant materials,the impact of boron-doped NCD films on the character of cell growth(i.e.,adhesion,proliferation) is very important.Boron-doped NCD films with resistivity of 10-2Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition(MPCVD) process with H2 bubbled B2O3.The crystal structure,diamond character,surface morphology,and surface roughness of the boron-doped NCD films were analyzed using different characterization methods,such as X-ray diffraction(XRD),Raman spectroscopy,scanning electron microscopy(SEM) and atomic force microscopy(AFM).The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope(SKFM).The cytotoxicity of films was studied by in vitro tests,including fluorescence microscopy,SEM and MTT assay.Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates.MG-63 cells adhered well and exhibited a significant growth on the surface of films,suggesting that the boron-doped NCD films were non-toxic to cells. Boron-doped nanocrystalline diamond(NCD) exhibits extraordinary mechanical properties and chemical stability,making it highly suitable for biomedical applications.For implant materials,the impact of boron-doped NCD films on the character of cell growth(i.e.,adhesion,proliferation) is very important.Boron-doped NCD films with resistivity of 10-2Ω·cm were grown on Si substrates by the microwave plasma chemical vapor deposition(MPCVD) process with H2 bubbled B2O3.The crystal structure,diamond character,surface morphology,and surface roughness of the boron-doped NCD films were analyzed using different characterization methods,such as X-ray diffraction(XRD),Raman spectroscopy,scanning electron microscopy(SEM) and atomic force microscopy(AFM).The contact potential difference and possible boron distribution within the film were studied with a scanning kelvin force microscope(SKFM).The cytotoxicity of films was studied by in vitro tests,including fluorescence microscopy,SEM and MTT assay.Results indicated that the surface roughness value of NCD films was 56.6 nm and boron was probably accumulated at the boundaries between diamond agglomerates.MG-63 cells adhered well and exhibited a significant growth on the surface of films,suggesting that the boron-doped NCD films were non-toxic to cells.
出处 《Plasma Science and Technology》 SCIE EI CAS CSCD 2015年第7期574-578,共5页 等离子体科学和技术(英文版)
基金 supported by the Open Foundation of State Key Laboratory of Electronic Thin Films and Integrated Devices(University of Electronic Science and Technology of China)(No.KFJJ201313)
关键词 nanocrystalline diamond microwave plasma CVD boron doping CYTOTOXICITY nanocrystalline diamond, microwave plasma CVD, boron doping, cytotoxicity
  • 相关文献

参考文献1

二级参考文献19

  • 1Martino A D, Sittinger M, Risbud M V. 2005, Bioma- terials, 26:5983.
  • 2Hu Q L, Li B Q, Wang M, et al. 2004, Biomaterials, 25:779.
  • 3Khor E, Lim L Y. 2003, Biomaterials, 24:2339.
  • 4Suh J K F, Matthew H W T. 2000, Biomaterials, 21: 2589.
  • 5Drury J L, Mooney D J. 2003, Biomaterials, 24:4337.
  • 6Sionkowska A, Wisniews M, Skopinska J, et al. 2004, Biomaterials, 25:795.
  • 7Xu H T, Ma L, Shi H F, et al. 2007, Polym. Adv. Tech., 18:869.
  • 8Freier T, Montenegro R, Koh H S, et al. 2005, Bioma- terials, 26:4624.
  • 9Wang Y J, Yin S H, Ren L, et al. 2009, Biomed. Mater., 4:035003.
  • 10Hallab N J, Bundy K J, Oconnor K, et al. 2001, Tissue Eng., 7:55.

共引文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部