摘要
采用反应直流磁控溅射法在镍锌铁氧体基片上制备的TaN薄膜电阻器,由于镍锌铁氧体基片表面平整性差,散热性能低,制得的电阻器功率为1 W。通过制作CaO-Al2O3-SiO2(CAS)玻璃釉,以丝网印刷的方式对基片表面进行处理,再经过850℃烧结处理,得到具有一定表面平整性的基片。基于处理后的铁氧体基片制作的TaN薄膜功率电阻器的功率显著提高,从1 W提升到了2.5 W。
TaN thin film resistors were prepared on Ni-Zn ferrite substrate by the reactive DC magnetron sputte- ring method. Since the Ni-Zn ferrite suhstrate had poor surface flatness and low heat dissipation, the power of the resistor was just 1 W. CaO-Al2 O3-SiO2 （CAS） glass glaze was made to treat the surface of the substrate by the man ner of screen printing,and then the substrate were sintered at 850 ℃, thus the substrate with a smooth surface was made. Finally, the power of resistors made on the treated substrates was greatly increased from 1 W to 2.5 W.
出处
《压电与声光》
CSCD
北大核心
2015年第3期460-463,共4页
Piezoelectrics & Acoustooptics
基金
国家自然科学基金资助项目(50972023)
