摘要
在实际工程应用的基础上,针对50k W/1MHz的高频感应加热大功率SiC MOSFET电路要求及SiC MOSFET开关特性进行开发研究。通过对SiC MOSFET的开通过程特性进行详细研究,得出使其可靠、安全驱动的要求,在现有已经成熟应用的Si MOSFET驱动电路基础上对其进行改进,研究适合工作在兆赫范围内的SiC MOSFET驱动电路。并采用双脉冲实验验证所设计驱动电路的基本特性及确定最佳门极电阻参数。
On the basis of project application, one kind of driver circuit for SiC MOSFET was discussed according to the requirements of 50kW/IMHz high power SiC MOSFET circuit, and the switching characteristics of SiC MOSFET. Through researching the process of opening the characteristics of SiC MOSFET in detail, come to make its reliable, safe driving requirements, to improve it in Si MOSFET driver circuit-based applications on existing mature, research for the job in the megahertz range of SiC MOSFET driver circuit. The basic characteristics of the driver circuit using double-pulse experiments verify the basic characteristics of designed driver circuit and determine the optimal parame- ters of the gate resistance.
出处
《电测与仪表》
北大核心
2015年第11期74-78,共5页
Electrical Measurement & Instrumentation
