GaAsMIS肖特基结的GaAs-MgO界面层的电学性质
摘要
使用分子束外延（MBE）技术生长Be掺杂的GaAs膜层,在此基础上,制备Au/GaAs Schottky二极管.另外,在Au与GaAs之间用原子层沉积技术（ALD） 插入一层MgO绝缘层,研究不同掺杂浓度的GaAs对势垒高度及影响因子的影响,实验结果表明,Au/MgO/GaAs结构的肖特基势垒,随着掺杂浓度的升高而增大,影响因子呈现先降低后增加的趋势.
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