数值仿真在江苏华创IGBT芯片设计和制造中的应用

Application of Numerical Simulation in Manufacturing of IGBT Chips

绝缘栅双极晶体管(IGBT)是新能源变频领域的核心器件[1],研发的过程中,数值仿真一直是重要的一环。为了减少研发成本、增加可靠性,本文使用Silvaco数值仿真软件,首先通过现有的产品建立准确的IGBT物理模型,再根据模型中的参数完成了以下工作:(1)对场限环和场版复合型IGBT终端结构设计进行指导,通过改变场版宽度和场限环数量,避免了终端设计缺陷引起电场扩散过快,导致击穿电压下降的问题,实验结果和数值仿真一致;(2)对现有设计结构不同工艺进行预测,评估了工艺改变对器件性能特性变化的影响,数值仿真和失效分析的结论一致指出了工艺条件的缺陷,指出可以降低推进时间来增加击穿电压。

From home application to industrial invertor, IGBT is playing more and more important role in renewable energy field. Simulation is one of the most important method in semiconductor manufacturing. To reduce R ＆ D cost with enhanced reliability, this paper, based on application of the Silvaco software, submits discussions on some simulation work in actual IGBT chip designing. Firstly, an accurate IGBT physical model is established by fitting the model to the actual IGBT device which has been in mass production. Then using this model, two works has been carried out successfully： （1） this model predicts the fast expanding of depletion edge in FLR ＋ FP IGBT edge termination design, after optimizing the FP ＆ FLR design, the breakdown voltage shows good agreement with the experimental results; （2） this model predicts reduction of breakdown voltage when changing the drive in condition, the simulation result shows good agreement with the failure analysis data.