面向高速应用的GaN基HEMT器件

GaN-Based HEMT Devices for High Speed Applications

工作在毫米波、亚毫米波频段的固态功率放大器可广泛应用于无线通信、汽车雷达等电子系统。氮化物材料具备禁带宽度大、电子速度高等特点,使得Ga N基HEMT器件成为面向高频器件和高速数字电路等高速应用的理想候选器件。但是为实现更佳的器件指标,仍需要进行多层次的设计和优化。重点讨论了面向高速应用的Ga N基器件所面临的挑战,如载流子限域性、电子速度以及在等比例缩小规律下的导通电阻等问题。分析表明,这些问题的解决将使Ga N基器件在高速、高频等领域得到广泛应用。

The solid state power amplifier is popular in the electronics system of wireless communication and vehicle radar. The native features such as large bandgap and high electron velocity make the GaN based high electron mobility transistor （HEMT） an ideal candidate for the high frequency and high speed digital circuits applications. However, multidimensional optimization and design are still required for the better device performance. The paper would emphasis the challenges of the GaN based HEMT for higher speed applications, i.e. carriers confinement, electron velocity and the access resistance of deeply scaled devices. Analysis results show the solution of these problems will make the GaN-based devices find wide use in the fields of high speed, high frequency, etc.