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采用噪声抵消技术的无电感宽带低噪声放大器 被引量：1

An Inductorless Wideband LNA Exploiting Noise Canceling Technique
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摘要 设计了一款多用途、宽带、无电感的低噪声放大器。放大器的第1级为单端输入差分输出结构,采用了噪声抵消技术来降低噪声;第2级引入有源感性负载,并通过电阻负反馈来扩展带宽。采用TSMC 130nm工艺对电路进行仿真,后仿结果表明,在0.4-6.2GHz带宽范围内,S21为19dB,噪声系数为1.9-2.5dB,功耗为9.6mW,电路核心面积为0.08mm^2。 A versatile wide band and inductorless low noise amplifier（LNA） was designed. Input of the first stage was single-ended exploiting noise Canceling technique while output was differential. To extend the bandwidth, an active inductive load was introduced in the second stage with the help of resistor feedback structure. The circuit was simulated with TSMC 130 nm process. Simulation results showed that S21 was 19 dB in bandwidth of 0.4-6.2 GHz. NF was within 1.9-2.5 dB. The LNA consumed 9.6 mW and the core area was 0.08 mm^2.
作者 杨开拓 方毅 黄鲁
机构地区 中国科学技术大学电子科学与技术系 中国科学技术大学信息科学实验中心
出处 《微电子学》 CAS CSCD 北大核心 2015年第3期285-289,共5页 Microelectronics
基金 国家科技重大专项"基于脉冲体制的多媒体终端高速数据无线传输系统研发和示范"(2011ZX03004-002-01)
关键词 宽带 噪声抵消 有源感性负载 低噪声放大器 射频集成电路 CMOS Wideband Noise canceling Active inductive load LNA RF IC CMOS
分类号 TN432 [电子电信—微电子学与固体电子学]
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参考文献7

  • 1BEVILACQUA A, NIKNEJAD A M. An ultrawideband CMOS low-noise amplifier for 3. 1-10. 6-GHz wirelessreceivers [J]. IEEE J Sol Sta Circ, 2004, 39(12) .. 2259- 2268,.
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二级参考文献22

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微电子学
2015年 第3期

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