摘要
为解决复杂环境下半导体器件的贮存可靠性评估问题,结合半导体器件的贮存失效机理及其寿命-应力模型,提出了基于多贮存应力加速寿命试验的半导体器件贮存可靠性评估方法。在此基础上,以某款中频对数放大电路为研究对象,通过对加速寿命试验结果的分析,获得了电路在规定贮存时间下的可靠度。
For semiconductor devices applied in complicated circumstance, it is difficult to assess the storage reliability by using traditional reliability analysis method. Aiming at this problem, a new storage estimation method for semiconductor devices was proposed based on multiple-stress accelerated test degradation test. The storage reliability of a certain type of intermediate frequency logarithmic amplifier under specific working condition was obtained by analyzing the results of designed test.
出处
《微电子学》
CAS
CSCD
北大核心
2015年第3期387-390,共4页
Microelectronics
基金
模拟集成电路重点实验室基金资助项目(9140C090406120C09037)
关键词
半导体器件
加速寿命试验
多贮存应力
贮存可靠性
Semiconductor device
Accelerated life test
Multiple-stress
Storage reliability
