期刊文献+

退火温度对p型CuCrO_2薄膜结构与光学性能的影响 被引量:1

Effect of annealing temperature on structure and transmittance properties of p-type CuCrO_2 film
下载PDF
导出
摘要 采用射频磁控溅射法在石英玻璃衬底上制备CuCrO2薄膜,研究退火温度对CuCrO2薄膜结构和光学性能的影响。结果表明:未经退火处理的CuCrO2薄膜为非晶态,颗粒较小,可见光透射率仅为56%。退火处理能够改善CuCrO2薄膜的结构和透光性能。随着退火温度的升高,薄膜结晶化程度逐渐增强,孔洞缺陷逐渐减少,薄膜逐渐变得平整致密,薄膜的透光性能得到改善,薄膜的吸收边向短波方向移动。当退火温度为800℃时,薄膜的性能最优,可见光透射率达到70%。光学带隙宽度为3.06eV。 CuCrO2 films were prepared by the radio frequency magnetron sputtering method on the quartz glass substrate. The effects of annealing temperature on the structure and optical properties of CuCrO2 films were investigated. The results show that the as-deposited CuCrO2 film is amorphous, in which particle is small, and its transparence in visible light is only 56%. Annealing treatment can improve the structure and optical properties of CuCrO2 films. With the annealing temperature increasing, the crystallization degree of CuCrO2 films increases, and the density of pore defects decreases, respectively. The films become smooth and compact gadually, and the light transmittance of the films increases with the increasing annealing temperature, the absorption edge of the films moves toward the short wavelength. When the annealing temperature is 800℃, the film has the best transmittance property, its transparence in visible light is 70%, and the optical band gab is about 3.06 eV.
出处 《电子元件与材料》 CAS CSCD 2015年第7期38-41,共4页 Electronic Components And Materials
基金 高等学校博士学科点专项科研基金资助(No.20124420110007) 广东省联合培养研究生示范基地人才培养项目资助(No.2013JDXM27)
关键词 CuCrO2 射频磁控溅射 退火温度 结构 光学性能 光学带隙宽度 CuCrO2 radio frequency magnetron sputtering annealing temperature structure optical properties optical band gap
  • 相关文献

参考文献11

  • 1YU R,TASI C.Structure,composition and properties of p-type CuCrO2thin films[J].Ceram Int,2014,40(6):8211-8217.
  • 2宋晓英,杨元政,刘远,谢致薇.p型透明导电氧化物CuCr_(1–x)Mg_xO_2的制备及光电性能研究[J].电子元件与材料,2013,32(8):38-41. 被引量:2
  • 3钟焕周,刘远,宋晓英,谢致薇,杨元政.溶胶-凝胶法制备CuAlO_2粉末及其光电性能研究[J].人工晶体学报,2012,41(3):642-646. 被引量:8
  • 4XIONG D,XU Z,ZENG X,et al.Hydrothermal synthesis of ultrasmall CuCrO2 nanocrystal alternatives to Ni O nanoparticles in efficient p-type dye-sensitized solar cells[J].J Mater Chem,2012,22(47):24760-24768.
  • 5CHEN H,YANG W,CHANG K.Characterization of delafossite-CuCrO2thin films prepared by post-annealing using an atmospheric pressure plasma torch[J].Appl Surf Sci,2012,258(22):8775-8779.
  • 6BYWALEZ R,GTZENDRFER S,LBMANN P.Structural and physical effects of Mg-doping on p-type CuCrO2 and Cu Al0.5Cr0.5O2 thin films[J].J Mater Chem,2010,20(31):6562-6570.
  • 7LI D,FANG X,ZHAO A,et al.Physical properties of CuCrO2 films prepared by pulsed laser deposition[J].Vacuum,2010,84(6):851-856.
  • 8李杨超,张铭,董国波,赵学平,严辉.CuCr_(1-x)Mg_xO_2(0≤x≤0.09)薄膜的光电性能[J].中国有色金属学报,2010,20(5):898-902. 被引量:6
  • 9YU R,WU C.Characteristics of p-type transparent conductive CuCrO2thin films[J].Appl Surf Sci,2013,282(10):92-97.
  • 10CHIU T,TSAI S,WANG Y,et al.Preparation of p-type conductive transparent CuCrO2:Mg thin films by chemical solution deposition with two-step annealing[J].Ceram Int,2012,38(1):S673-S676.

二级参考文献23

  • 1赵大庆,姚为.P型CuAlO_2半导体陶瓷的烧结研究[J].粉末冶金技术,2004,22(6):333-336. 被引量:3
  • 2刘恩科,朱秉升,罗晋生.半导体物理学[M].北京:电子工业出版社,2009:76.
  • 3Kawazoe H, Yangagi H, Kazushige U, et al. Transparent p-type Conducting Oxides: Design and Fabrication of P-N Heterojunctions [ J ]. MRS Bulletin ,2000 ,25 ( 8 ) :28-36.
  • 4Kawazoe H, Yasukawa M, Hyodo H, et al. p-Type Electrical Conduction in Transparent Thin Films of CuAIO2 [ J ]. Nature, 1997,389:939 -942.
  • 5Deng Z H, Zhu X B, Tao R, et al. Synthesis of CuAIO2 Ceramics Using Sol-Gel[J]. Materials Letters,2007,61(3) :686-689.
  • 6Ghosh C K, Popuri S R, Mahesh T U, et al. Preparation of Nanocrystalline CuAIO2 through Sol-Gel Route [ J ]. Journal of Sol-Gel Science and Technology,2009,52( 1 ) :75-81.
  • 7Tonooka K, Shimokawa K, Nishimura O. Properties of Copper-Aluminum Oxide Films Prepared by Solution Methods[J]. Thin Solid Films,2002, 411( 1 ) : 129-133.
  • 8Kim D S, Choi S Y. Wet-Oxidation Effect on p-Type Transparent Conducting CuA102 Thin Film [ J ]. Physica Status Solidi ( a), 2005,202 ( 15 ) 167-169.
  • 9董国波,张铭,兰伟,朱满康,严辉.Cu_xAlO_2(0.92≤x≤1.0)陶瓷电输运性能[J].中国有色金属学报,2007,17(9):1470-1474. 被引量:5
  • 10KAWAZOE H, YASUKAWA M, HYODO H, et al. p-type electrical conduction in transparent thin films of CuAIO2 [J]. Nature, 1997, 389: 939-942.

共引文献11

同被引文献2

引证文献1

相关作者

内容加载中请稍等...

相关机构

内容加载中请稍等...

相关主题

内容加载中请稍等...

浏览历史

内容加载中请稍等...
;
使用帮助 返回顶部