摘要
采用射频磁控溅射沉积并结合热处理制备Mg2Si/Si异质结,研究了溅射时间对Mg2Si/Si异质结的结构以及电阻率的影响。首先在P型Si衬底沉积不同厚度的Mg膜,然后进行低真空热处理,制备不同厚度的Mg2Si/Si异质结。通过XRD、SEM对Mg2Si/Si异质结中Mg2Si的晶体结构、异质结表面和剖面形貌进行分析,结果表明:制备了单一相Mg2Si薄膜,Mg2Si(220)衍射峰最强,异质结界面平整。通过四探针仪测量电阻率进行分析,发现电阻率随Mg2Si膜厚的增加而减小。
Mg2Si/Si heterojunctions were prepared by RF-magnetron sputtering and heat treatment. The influences of sputtering time on the microstructures and the resistivity of the samples were investigated in detail. The different thickness of Mg films was deposited onto P-type Si substrates, and then low vacuum heat treatment was carried out. A series of MgzSi/Si heterojunetions were prepared with different thicknesses. Crystal structure and cross-section of the prepared Mg2Si/Si heterojunctions were characterized by X-ray diffraction and scanning electron microscopy. The results show that single phase Mg2Si films are obtained, and Mg2Si （220） peak is the strongest. The interface of Mg2Si/Si heterojunction is smooth. Electrical resistivity is performed by four probe method. It decreases with the increase of the thickness of Mg2Si films.
出处
《电子元件与材料》
CAS
CSCD
2015年第7期46-49,共4页
Electronic Components And Materials
基金
国家自然科学基金资助项目(No.61264004)
科技部国际科技合作专项资助项目(No.2008DFA52210)
贵州省自然科学基金资助项目(No.黔科合J字[2014]2052)
关键词
硅化镁/硅异质结
射频磁控溅射
溅射时间
X射线衍射
表面形貌
电阻率
Mg2Si/Si heterojunction
RF-magnetron sputtering
sputtering time
X-ray diffxaction
surfacemorphology
electrical resistivity
