电流阻挡层结构对垂直发光二极管芯片老化特性之研究

Aging characteristic investigation of VLEDs with current blocking layer structure

发现ICP damage制作电流阻挡层的制程会导致垂直结构LED在老化过程中发生漏电。通过更换反射层的金属及EMMI&SEM分析,发现老化漏电的原因来源于反射金属——Ag的电迁移,迁移通道可能来源于ICP打开穿透位错的封口。在缺陷位错内填入低电迁移率金属并检测。结果表明,填入低电迁移率金属后既解决了老化漏电问题,同时不影响芯片的初始光电特性。

The failure of current leakage in the process of ICP-damage current blocking layer was found. Through changing reflecting layer metal and EMMI ＆ SEM inspection, it was found that the failure can be ascribed to reflecting metal Ag electro migration, whose migrating channel may be ascribed by penetrating dislocation seal opened by the ICP treatment. Low electro migration rate metal was deposited in the defect dislocation, then the chip was tested. Results show that the question of aging current leakage is solved after the low electro migration rate metal to be deposited. Meanwhile, initial lighting property of the chip isn＇t influenced.