KDP晶体(001)晶面纳米压痕的仿真研究

Simulation Research of Nanoindentation on the( 001) Face of KDP Crystal

在KDP晶体（001）晶面上进行了四种压头（即：维氏压头、玻氏压头、圆锥压头、球形压头）的纳米压痕仿真研究。仿真结果表明：完全加载时四种压头与KDP晶体接触位置存在不同程度应力集中。当载荷在0-8 m N范围内时,其与等效应力影响深度呈近似线性递增关系。完全卸载时,残余应力分布深度为1.3-1.5μm。相同载荷条件下,各压头对应的塑性损伤层深度之间关系与等效应力影响深度之间关系一致。此外,通过纳米压痕实验验证了KDP晶体材料模型及相关参数的正确性。

The simulation research of nanoindentation on the（ 001） face of KDP crystal using four kinds of indenters（ i. e.,vickers indenter,berkovich indenter,conical indenter and spherical indenter） were carried out. Simulation results show that different extent of the stress concentration exists in the contact areas between four kinds of indenters and KDP crystal at the end of loading process. The relationship between load and the influence depth of equivalent stress is approximate linear increasing when the load lies within the range of 0-8 m N. The distribution depth of residual stress is 1. 3-1. 5 μm at the end of unloading process. For each kind of indenter,the relationship between the plastic damage layer＇s depth and the equivalent stress＇ s influence depth is the same under the identical loading conditions. In addition,both the material model of KDP crystal and the relative parameters have been verified through nanoindentation experiments.