衬底温度对硼掺杂ZnO薄膜微观结构及其光电特性的影响

Influence of Substrate Temperature on the Microstructure and Photoelectric Properties of Boron Doped ZnO Thin Film

采用射频磁控溅射技术,改变玻璃衬底温度制备B掺杂ZnO薄膜,薄膜的微结构及其光电性能分别用X-射线衍射仪、紫外-可见分光光度计、四探针测试仪及粗糙度测试仪进行表征。结果表明：ZnO∶B薄膜样品表面平整,具有六角纤锌矿结构并呈C轴择优取向。所有薄膜样品在420~900 nm区间内的平均透光率大于91%。随着温度的增加,电阻率先减小后增大,但晶粒尺寸一直变大。衬底温度为100℃时电阻率可低至1.14×10-3Ω·cm,所有样品禁带宽度相对于本征ZnO蓝移。

ZnO： B thin films were deposited on glass substrate by magnetron sputtering at different temperatures. Microstructural and photoluminescence properties of ZnO： B thin films were studied by X- ray diffraction（XRD）, ultraviolet-visible spectrophotometer, four-probe meterand and roughmeter. The results show that the ZnO： B film sampleg surface is flat which has hexagonal wurtzite structure and C-axis preferred orientation. For all the thin film samples, the average transmittance is over 91% between 420 nm and 900 nm. With temperature increases, the resistance first decreases and then increases, however the grain size increases monotonely. The lowest resistivity can be achieved to 1.14 × 10^-3 Ω· cm when the substrate temperature is 100 ℃. All the samples＇band gaps have blue shifts by contrast with ZnO.